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Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation
Magalhães, S.; Peres, M.; Fellmann, V.; Daudin, B.; Neves, A.J.; Alves, E.; Monteiro, T.; Lorenz, K.Self-assembled GaN quantum dots (QDs) stacked in superlattices (SL) with AlN spacer layers were implanted with Europium ions to fluences of 1013, 1014, and 1015 cm−2. The damage level introduced in the QDs by the implantation stays well below that of thick GaN epilayers. For the lowest fluence, the structural properties remain unchanged after implantation and annealing while for higher fluences the implantation...
Optical doping and damage formation in AIN by Eu implantation
Lorenz, K.; Alves, E.; Gloux, F.; Ruterana, P.; Peres, M.; Neves, A. J.; Monteiro, T.AlN films grown on sapphire were implanted with 300 keV Eu ions to fluences from 3×1014 to 1.4×1017 atoms/cm2 in two different geometries: “channeled” along the c-axis and “random” with a 10° angle between the ion beam and the surface normal. A detailed study of implantation damage accumulation is presented. Strong ion channeling effects are observed leading to significantly decreased damage levels for the chan...
Optical doping of nitrides by ion implantation
Alves, E.; Lorenz, K.; Vianden, R.; Boemare, C.; Soares, M.J.; Monteiro, T.A series of rare earth elements (RE) were implanted in GaN epilayers to study the lattice site location and optical activity. Rutherford backscattering spectrometry in the channeling mode(RBS/C) was used to follow the damage behavior in the Ga sublattice and the site location of the RE. For all the implanted elements (Ce, Pr, Dy, Er, and Lu) the results indicate the complete substitutionality on Ga sites after ...
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