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Raman analysis of Si–C–N films grown by reactive magnetron sputtering
Liang, E. J.; Zhang, J. W.; Leme, J.; Moura, C.; Cunha, L.Silicon carbon nitride thin films have been deposited by reactive magnetron sputtering of silicon and graphite targets in mixed Ar/N2 atmosphere at substrate temperature of 300 °C. The substrate bias voltage varied from -50 up to +50 Vand the nitrogen flow rate varied from 0 to 20 sccm. The as-deposited films were analyzed by Raman spectroscopy (RS) and X-ray photoelectron spectroscopy (XPS). The Raman analyses...
Data: 2004
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Origem: RepositóriUM - Universidade do Minho
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