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Oxygen sensitivity of erbium-doped AlN films probed by site selective spectroscopy
Oliveira, J. C.; Cavaleiro, A.; Vieira, M. T.; Bigot, L.; Garapon, C.; Jacquier, B.; Mugnier, J.In the aim of better understand the influence of oxygen on the luminescent properties of Er:AlN films, two samples synthesized by radiofrequency reactive magnetron sputtering, have been analysed by site-selective spectroscopy around 1.55 [mu]m and compared to a reference aluminosilicate sample. The erbium content in the films was estimated to 3.3 at.% and oxygen content ranges from 6.2 at.% to 58.6 at.% (determ...
Data: 2003
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Origem: Estudo Geral - Universidade de Coimbra
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