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Influence of Parasitic Capacitances in Modeling and Analysis of Advanced Floati...
André Moreira; José Machado da Silva; Guoquiao TaoIn this paper, we report the impact of the parasitic capacitances in the modeling and analysis of advanced floating gate (FG) non-volatile memory (NVM) devices, especially on the coupling ratio. Due to the poor accuracy of the existing capacitance model when compared to practice, an approach to include the parasitic capacitances has been established. Measurement results from two transistor (2T) Fowler-Nordheim ...
Data: 2009
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Origem: Repositório Aberto da Universidade do Porto
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