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Strain distribution in GaN hexagons measured by Raman spectroscopy
Seitz, R.; Monteiro, Teresa; Pereira, Maria Estela; Di Forte-Poisson, M.Epitaxial growth of GaN layers normally starts in a three-dimensional growth mode at nucleation sites. Growth islands are formed which coalesce when a certain layer thickness is achieved. In our samples these islands show hexagonal structure and in some cases a flat surface plane perpendicular to the (0001) growth direction. We studied these hexagons by spatially resolved Raman spectroscopy. Raman spectroscopy ...
Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes
Vacas, J.; Lahrèche, H.; Monteiro, T.; Caspar, C.; Pereira, E.; Brylinski, C.; Di Forte-Poisson, M.A.A comparative study between GaN/SiC heterojunction and 6H-SiC homojunction diodes has been performed to understand the physical properties of n-p GaN/SiC heterojunction interface. The 6H-SiC homojunction diodes presented typical I-V characteristics with satisfactory breakdown voltage (≅-800 V), however, the GaN/SiC heterojunction diodes showed an abnormal low forward turn-on voltage (≅1.8 V). The presence of a ...
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