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Effect of nitrogen gas flow on amorphous Si–C–N films produced by PVD techniques

Moura, C.; Cunha, L.; Orfão, H.; Pischow, K.; De Rijk, J.; Rybinski, M.; Mrzyk, D.

Si C N thin films were deposited by reactive magnetron sputtering on glass and steel substrates. The films were grown in a x y z rotation mode over a carbon and a silicon targets in a mixed Ar/N2 atmosphere at a substrate temperature of 300 °C. The 2 substrates were held grounded or at a negative bias of -25 and -50 V. The film characteristics were also controlled by nitrogen flow. Binary and ternary films were...


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