Si C N thin films were deposited by reactive magnetron sputtering on glass and steel substrates. The films were grown in a x y z rotation mode over a carbon and a silicon targets in a mixed Ar/N2 atmosphere at a substrate temperature of 300 °C. The 2 substrates were held grounded or at a negative bias of -25 and -50 V. The film characteristics were also controlled by nitrogen flow. Binary and ternary films were...
Financiadores do RCAAP | |||||||
![]() |
![]() |
![]() |
![]() |
![]() |
![]() |