In partial fulfillment of the requirements for the degree of Doctor of Philosophy in Nanotechnologies and Nanosciences by Universidade Nova de Lisboa Faculdade de Ciências e Tecnologia
IEEE Electron Device Letters, VOL. 29, NO. 9, ; Abstract—In this letter, we report for the first time the use of a sheet of cellulose-fiber-based paper as the dielectric layer used in oxide-based semiconductor thin-film field-effect transistors(FETs). In this new approach, we are using the cellulose–fiber-based paper in an “interstrate” structure since the device is built on both sides of the cellulose sheet. ...
Applied Physics Letters, Vol.93, issue 20 ; We report the architecture and the performances of a memory based on a single field-effect transistor built on paper able to write-erase and read. The device is composed of natural multilayer cellulose fibers that simultaneously act as structural support and gate dielectric; active and passive multicomponent amorphous oxides that work as the channel and gate electrod...
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