Encontrados 3 documentos, a visualizar página 1 de 1
Photoluminescence and damage recovery studies in Fe-implanted ZnO single crystals
Monteiro, T.; Boemare, C.; Soares, M.J.; Rita, E.; Alves, E.We report Fe3+-related emission in ion-implanted ZnO single crystals. Iron ions were implanted at room temperature with 100 keV and a fluence of 1×1016 Fe+/cm2, and were submitted to annealing treatments in vacuum and in air. After implantation, the damage raises the minimum yield (χmin) from 2% to 50%. Annealing in an oxidizing atmosphere leads to a reduction of the implantation damage, which is fully recovere...
Influence of crystals distribution on the photoluminescence properties of nanoc...
Cerqueira, M. F.; Stepikhova, M.; Losurdo, M.; Giangregorio, M. M.; Alves, E.; Monteiro, T.; Soares, M. J.; Boemare, C.Nanocrystalline silicon thin films doped with erbium were produced by reactive magnetron RF sputtering. Their structural and chemical properties were studied by X-ray diffractometry at grazing incidence, micro-Raman, spectroscopic ellipsometry and Rutherford Backscattering Spectroscopy, respectively. Films with different crystalline fraction and crystallite size were deposited. Since the luminescence efficiency...
Optical doping of nitrides by ion implantation
Alves, E.; Lorenz, K.; Vianden, R.; Boemare, C.; Soares, M.J.; Monteiro, T.A series of rare earth elements (RE) were implanted in GaN epilayers to study the lattice site location and optical activity. Rutherford backscattering spectrometry in the channeling mode(RBS/C) was used to follow the damage behavior in the Ga sublattice and the site location of the RE. For all the implanted elements (Ce, Pr, Dy, Er, and Lu) the results indicate the complete substitutionality on Ga sites after ...
| Financiadores do RCAAP | |||||||
|
|
|
|
|
|
||