Direct current magnetron sputtering was used to produce AlNxOy thin films, using an aluminum target, argon and a mixture of N2+O2 (17:3) as reactive gases. The partial pressure of the reactive gas mixture was increased, maintaining the discharge current constant. Within the two identified regimes of the target (metallic and compound), four different tendencies for the deposition rate were found and a morphologi...
The AlNxOy system offers the possibility to obtain a wide range of responses, by tailoring the properties between Al, AlN and Al2O3, opening a significant number of possible applications. The aim of this work is to correlate the optical properties of AlNxOy thin films with their composition and structural features, taking as reference the binary systems AlNx and AlOy. In the AlNx system, the increase of the nit...
Resumo e poster ; Aluminium, Al, is a metallic material used in a large variety of technological fields, such as surface plasmon-coupled emission (SPCE) devices for biochemical applications and it is also a good candidate to be used as nonresonante plasmonic nanoparticle in thin-film silicon solar cells. Aluminium nitride, AlN, is a semiconductor material and it can be used in the fabrication of optical sensor...
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