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Effects of annealing on the electrical and optical properties of AlNxOy thin films
Borges, Joel; Arvinte, R.; Barradas, Nuno; Alves, Eduardo; Camelio, Sophie; Girardeau, Thierry; Paumier, Fabien; Vaz, F.; Marques, L.Resumo e poster ; Aluminium oxynitride is known to be a ceramic material with high strength and hardness, resulting from a stabilization of alumina (Al2O3) with nitrogen, in a cubic spinel structure, at thermodynamic conditions very different from those found in low plasma temperature deposition processes. Beyond this stable phase of AlNxOy, the available knowledge on this system is still very reduced and the ...
Electrical properties of AlNxOy deposited by DC magnetron sputtering
Borges, Joel; Arvinte, R.; Ramos, Marta M. D.; Martin, N.; Vaz, F.; Marques, L.Apresentação em poster ; Al2O3 is an insulator material, with high electrical breakdown and large band gap. Its dielectric properties make it a candidate to be used as gate material instead of SiO2 in microelectronic applications, such as in flash memory circuits. On the other hand, AlN is a ceramic piezoelectric material with high electrical resistivity and excellent thermal properties, which has been used in...
AlNxOy thin films for electrical applications
Borges, Joel; Arvinte, R.; Sousa, R. E.; Vaz, F.; Marques, L.Comunicação oral ; Aluminium oxide (Al2O3) is an insulator material, with high electrical breakdown, large band gap and high permittivity. Its dielectric properties make it a promising candidate to be used as gate material instead of SiO2 in microelectronic applications, such as in flash memory circuits, organic thin film transistors (OTFT) and MOSFETs. On the other hand, aluminium nitride (AlN) is a ceramic p...
Preparation and characterization of CrN Oy thin films : the effect of compos...
Arvinte, R.; Borges, Joel; Sousa, R. E.; Munteanu, Florentina-Daniela; Barradas, N. P.; Alves, E.; Vaz, F.; Marques, L.Metallic oxynitrides have attracted the attention of several researchers in the last decade due to their versatile properties. Through the addition of a small amount of oxygen into a transition metal nitride film, the material’s bonding states between ionic and covalent types can be tailored, thus opening a wide range of electrical, optical, mechanical and tribological responses. Among the o...
Characterization of the electrical and optical properties of the CrNxOy and AlN...
Arvinte, R.Dissertação de mestrado em [Física] ; The metallic oxynitrides have attracted the attention of many researchers in the last decade due their versatile properties. By controlling the oxide/nitride ratio, the electronic properties of materials can be tuned from those of low resistivity metallic nitrides to those of insulator oxides. In this thesis the optical and electrical properties of AlNxOy and CrNxOy thin ...
Electrical properties of AlNxOy thin films deposited by DC magnetron sputtering
Borges, Joel; Arvinte, R.; Martin, N.; Vaz, F.; Marques, L.Apresentação em poster ; Al2O3 is an insulator material, with high electrical breakdown and large band gap. Its dielectric properties make it a candidate to be used as gate material instead of SiO2 in microelectronic applications, such as in flash memory circuits. On the other hand, AlN is a ceramic piezoelectric material with high electrical resistivity and excellent thermal properties, which has been used in...
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