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Raman study of doped-ZnO thin films
Cerqueira, M. F.; Rolo, Anabela G.; Viseu, T. M. R.; Campos, J. Ayres de; Arôso, T. de Lacerda; Oliveira, F.; Vasilevskiy, Mikhail; Alves, E.A Raman spectroscopy study of doped versus undoped ZnO layers is presented. The layers were grown by RF magnetron sputtering and the doping with Al, Sb and Mn was achieved by ion implantation with subsequent annealing. First-order Raman response measured under λ=488 nm excitation is discussed. It is shown that doping with any of the impurities used in this work produces a strong enhancement of the longitudinal ...
Electrical and raman scattering studies of ZnO:P and ZnO:Sb thin films
Campos, J. Ayres de; Viseu, T. M. R.; Barradas, N. P.; Alves, E.; Lacerda-Arôso, T. de Lacerda; Cerqueira, M. F.; Rolo, Anabela G.A study on the structure, electrical and optical properties of ZnO thin films produced by r.f. magnetron sputtering and implanted either with phosphorous (P) or antimony (Sb) is reported in this work. Raman spectroscopy, X-ray diffraction, optical transmittance and Hall effect measurements have been employed to characterize the samples. X-ray diffraction and Raman scattering patterns confirm that, after a 500ºC...
ZnO thin films implanted with Al, Sb and P : optical, structural and electrical...
Viseu, T. M. R.; Campos, J. Ayres de; Rolo, Anabela G.; Arôso, T. de Lacerda; Cerqueira, M. F.; Alves, E.In this work we report a study on the structure, optical and electrical properties of P, Sb and Al implanted ZnO thin films that had been produced by r.f. magnetron sputtering. The influence of the different replacing atoms on the structure and properties of the films has been explored. Looking for the best annealing conditions, two different annealing temperatures (300ºC and 500ºC) have been employed. Raman sp...
The annealing effect on structural and optical properties of ZnO thin films pro...
Rolo, Anabela G.; Campos, J. Ayres de; Viseu, T. M. R.; Arôso, T. de Lacerda; Cerqueira, M. F.In this work, a study of the structure and optical properties of undoped ZnO thin films produced by r.f. magnetron sputtering technique as a function of the growth parameters is reported. Modification under annealing conditions is also analysed. Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction and optical transmittance have been used. From the position of the (002) X-ray diffraction peak ...
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