Time resolved photoluminescence of cubic Mg doped GaN

• Author(s): Seitz, R. ; Gaspar, C. ; Monteiro, T. ; Pereira, E. ; Schoettker, B. ; Frey, T. ; As, D.J. ; Schikora, D. ; Lischka, K.
• Date: 1999
• Persistent ID: http://hdl.handle.net/10773/7083
• Origin: RIA - Repositório Institucional da Universidade de Aveiro
• Subject(s): Band structure; Crystal structure; Electron emission; Electron energy levels; Energy gap; Magnesium; Photoluminescence; Semiconductor doping; Temperature
• Document Type: Conference Object
• Language: English

Description

Mg doped cubic GaN layers were studied by steady state and time resolved photoluminescence. The blue emission due to Mg doping can be decomposed in three bands. The decay curves and the spectral shift with time delays indicates donor-acceptor pair behaviour. This can be confirmed by excitation density dependent measurements. Furthermore temperature dependent analysis shows that the three emissions have one impurity in common. We propose that this is an acceptor level related to the Mg incorporation and the three deep donor levels are due to compensation effects.