Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes

• Author(s): Vacas, J. ; Lahrèche, H. ; Monteiro, T. ; Caspar, C. ; Pereira, E. ; Brylinski, C. ; Di Forte-Poisson, M.A.
• Date: 2000
• Persistent ID: http://hdl.handle.net/10773/6087
• Origin: RIA - Repositório Institucional da Universidade de Aveiro
• Subject(s): Homojunction and heterojunction diodes; electroluminescence; deep level
• Document Type: Article
• Language: English

Description

A comparative study between GaN/SiC heterojunction and 6H-SiC homojunction diodes has been performed to understand the physical properties of n-p GaN/SiC heterojunction interface. The 6H-SiC homojunction diodes presented typical I-V characteristics with satisfactory breakdown voltage (≅-800 V), however, the GaN/SiC heterojunction diodes showed an abnormal low forward turn-on voltage (≅1.8 V). The presence of a deep-level 1 eV below the p-SiC conduction band, is probably responsible for a tunneling- assisted current at low forward voltages, due to a high concentration of interface defects.