Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ions

• Author(s): Monteiro, T. ; Neves, A. J. ; Soares, M. J. ; Carmo, M. C. ; Peres, M. ; Alves, E. ; Rita, E.
• Date: 2005
• Persistent ID: http://hdl.handle.net/10773/5630
• Origin: RIA - Repositório Institucional da Universidade de Aveiro
• Subject(s): Zinc compounds; Thulium; II-VI semiconductors; iion implantation; Optical frequency conversion; Ultraviolet spectra; Visible spectra; Photoluminescence; Energy gap
• Document Type: Article
• Language: English

Description

We report on the up-converted ultraviolet near-band edge emission of bulk ZnO generated by visible and ultraviolet photons with energies below the band gap. This up-converted photoluminescence was observed in samples intentionally doped with Tm ions, suggesting that the energy levels introduced by the rare earth ion in the ZnO band gap are responsible for this process. FCT/FEDER - POCTI/CTM/45236/02 FCT/FEDER - POCTI/FAT/48822