Author(s):
Rocha, J. G. 
; Ramos, N. F. ; Wolffenbuttel, R. F. ; Correia, J. H.
Date: 2003
Persistent ID: http://hdl.handle.net/1822/4287
Origin: RepositóriUM - Universidade do Minho
Document details
CMOS x-ray image sensor with pixel level A/D conversion
Description
This paper describes a pixel array for x-rays imaging consisting in 400 um x 400 um photodiodes fabricated in CMOS technology, with an A/D converter for each one. Above the photodiodes, an array of scintillating CsI:Tl crystals are placed. So, the x-ray energy is first converted to visible light by the scintillating crystals which is then detected by the photodiodes. The photocurrent produced by each photodiode is finally converted to a digital form by a sigma-delta analog to digital converter. The sigma-delta a/d converter uses 18 minimum-size MOSFETs and one capacitor. 8 to 10 bits of resolution can be achieved.
This paper describes a pixel array for x-rays imaging consisting in 400 um x 400 um photodiodes fabricated in CMOS technology, with an A/D converter for each one. Above the photodiodes, an array of scintillating CsI:Tl crystals are placed. So, the x-ray energy is first converted to visible light by the scintillating crystals which is then detected by the photodiodes. The photocurrent produced by each photodiode is finally converted to a digital form by a sigma-delta analog to digital converter. The sigma-delta a/d converter uses 18 minimum-size MOSFETs and one capacitor. 8 to 10 bits of resolution can be achieved.
Document Type
Conference Object
Language English
Language English
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