Author(s):
Rodrigues, J. N. B. 
; Peres, N. M. R. ; Santos, J. M. B. Lopes dos
Date: 2012
Persistent ID: http://hdl.handle.net/1822/21962
Origin: RepositóriUM - Universidade do Minho
Subject(s): Graphene
Document details
Scattering by linear defects in graphene : a continuum approach
Description
We study the low-energy electronic transport across periodic extended defects in graphene. In the continuum low-energy limit, such defects act as infinitesimally thin stripes separating two regions where Dirac Hamiltonian governs the low-energy phenomena. The behavior of these systems is defined by the boundary condition imposed by the defect on the massless Dirac fermions. We demonstrate how this low-energy boundary condition can be computed from the tight-binding model of the defect line. For simplicity we consider defect lines oriented along the zigzag direction, which requires the consideration of only one copy of Dirac equation. Three defect lines of this kind are studied and shown to be mappable between them: the pentagon-only, the zz(558) and the zz(5757) defect lines. In addition, in this same limit, we calculate the conductance across such defect lines with size L, and find it to be proportional to k_FL at low temperatures.
We study the low-energy electronic transport across periodic extended defects in graphene. In the continuum low-energy limit, such defects act as infinitesimally thin stripes separating two regions where Dirac Hamiltonian governs the low-energy phenomena. The behavior of these systems is defined by the boundary condition imposed by the defect on the massless Dirac fermions. We demonstrate how this low-energy boundary condition can be computed from the tight-binding model of the defect line. For simplicity we consider defect lines oriented along the zigzag direction, which requires the consideration of only one copy of Dirac equation. Three defect lines of this kind are studied and shown to be mappable between them: the pentagon-only, the zz(558) and the zz(5757) defect lines. In addition, in this same limit, we calculate the conductance across such defect lines with size L, and find it to be proportional to k_FL at low temperatures.
Document Type
Article
Language English
Language English
| Financiadores do RCAAP | |||||||
|
|
|
|
|
|
||