Field-effect tunneling transistor based on vertical graphene heterostructures

• Autor(es): Britnell, L. ; Gorbachev, R. V. ; Jalil, R. ; Belle, B. D. ; Schedin, F. ; Katsnelson, M. I. ; Eaves, L. ; Morozov, S. V. ; Peres, N. M. R. ; Leist, J. ; Geim, A. K. ; Novoselov, K. S. ; Ponomarenko, L. A.
• Data: 2012
• Identificador Persistente: http://hdl.handle.net/1822/21512
• Origem: RepositóriUM - Universidade do Minho
• Assunto(s): Graphene
• Tipo de Documento: Artigo
• Idioma: Inglês

Descrição

We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron nitride acting as a tunnel barrier. They exhibit room temperature switching ratios ~50, a value that can be enhanced further by optimizing the device structure. These devices have potential for high frequency operation and large scale integration.