Author(s):
Peres, N. M. R. 
; Santos, J. M. B. Lopes dos ; Castro Neto, A. H.
Date: 2011
Persistent ID: http://hdl.handle.net/1822/12894
Origin: RepositóriUM - Universidade do Minho
Subject(s): Graphene
Document details
Coulomb drag and high resistivity behavior in double layer graphene
Description
We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on/o ratio for current ow by tunning the external gate voltage. Hence, although graphene remains semi-metallic, the double layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double layer graphene samples in disordered SiO2 substrates.
We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on/o ratio for current ow by tunning the external gate voltage. Hence, although graphene remains semi-metallic, the double layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double layer graphene samples in disordered SiO2 substrates.
Document Type
Article
Language English
Language English
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