Coulomb drag and high resistivity behavior in double layer graphene

• Autor(es): Peres, N. M. R. ; Santos, J. M. B. Lopes dos ; Castro Neto, A. H.
• Data: 2011
• Identificador Persistente: http://hdl.handle.net/1822/12894
• Origem: RepositóriUM - Universidade do Minho
• Assunto(s): Graphene
• Tipo de Documento: Artigo
• Idioma: Inglês

Descrição

We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on/o ratio for current ow by tunning the external gate voltage. Hence, although graphene remains semi-metallic, the double layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double layer graphene samples in disordered SiO2 substrates.