Cu2ZnSnS4 solar cells prepared with sulphurized dc-sputtered stacked metallic p...

• Author(s): Fernandes, P. A. ; Salomé, P. M. P. ; Cunha, A. F. da ; Schubert, Björn-Arvid
• Date: 2010
• Persistent ID: http://hdl.handle.net/10400.22/3425
• Origin: Repositório Científico do Instituto Politécnico do Porto
• Subject(s): Cu2ZnSnS4; CZTS; Sputtering; Sulphurization; Thin film; Solar cell; Raman
• Document Type: Article
• Language: English

Description

In the present work we report the details of the preparation and characterization results of Cu2ZnSnS4 (CZTS) based solar cells. The CZTS absorber was obtained by sulphurization of dc magnetron sputtered Zn/Sn/Cu precursor layers. The morphology, composition and structure of the absorber layer were studied by scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction and Raman scattering. The majority carrier type was identified via a hot point probe analysis. The hole density, space charge region width and band gap energy were estimated from the external quantum efficiency measurements. A MoS2 layer that formed during the sulphurization process was also identified and analyzed in this work. The solar cells had the following structure: soda lime glass/Mo/CZTS/CdS/i-ZnO/ZnO:Al/Al grid. The best solar cell showed an opencircuit voltage of 345 mV, a short-circuit current density of 4.42 mA/cm2, a fill factor of 44.29% and an efficiency of 0.68% under illumination in simulated standard test conditions: AM 1.5 and 100 mW/cm2.