Assessment of the potential of tin sulphide thin films prepared by sulphurizati...

• Author(s): Malaquias, J. ; Fernandes, P. A. ; Salomé, P. M. P. ; Cunha, A. F. da
• Date: 2011
• Persistent ID: http://hdl.handle.net/10400.22/3423
• Origin: Repositório Científico do Instituto Politécnico do Porto
• Subject(s): Tin sulphide; Sulphurization; Thin film; Solar cell
• Document Type: Article
• Language: English

Description

In this work, SnxSy thin films have been grown on soda-lime glass substrates by sulphurization of metallic precursors in a nitrogen plus sulphur vapour atmosphere. Different sulphurization temperatures were tested, ranging from 300 °C to 520 °C. The resulting phases were structurally investigated by X-Ray Diffraction and Raman spectroscopy. Composition was studied using Energy Dispersive Spectroscopy being then correlated with the sulphurization temperature. Optical measurements were performed to obtain transmittance and reflectance spectra, from which the energy band gaps, were estimated. The values obtained were 1.17 eV for the indirect transition and for the direct transition the values varied from 1.26 eV to 1.57 eV. Electrical characterization using Hot Point Probe showed that all samples were p-type semiconductors. Solar cells were built using the structure: SLG/Mo/SnxSy/CdS/ZnO:Ga and the best result for solar cell efficiency was 0.17%.