Document details

Modelling of Magnetron Sputtering of Tungsten Oxide with Reactive Gas Pulsing

Author(s): Kubart, Tomáscaron cv logo 1 ; Polcar, Tomáscaron cv logo 2 ; Kappertz, Oliver cv logo 3 ; Parreira, Nuno cv logo 4 ; Nyberg, Tomas cv logo 5 ; Berg, Sören cv logo 6 ; Cavaleiro, Albano cv logo 7

Date: 2007

Persistent ID: http://hdl.handle.net/10316/10109

Origin: Estudo Geral - Universidade de Coimbra


Description
Reactive sputtering is one of the most commonly employed processes for the deposition of thin films. However, the range of applications is limited by inherent instabilities, which necessitates the use of a complex feedback control of reactive gas (RG) partial pressure. Recently pulsing of the RG has been suggested as a possible alternative. In this report, the concept of periodically switching the RG flow between two different values is applied to the deposition of tungsten oxide. The trends in the measured time dependent RG pressure and discharge voltage are reproduced by a dynamical model developed for this process. Furthermore, the model predicts the compositional depth profile of the deposited film reasonably well, and in particular helps to understand the formation of the interfaces in the resulting multi-layer film. http://dx.doi.org/10.1002/ppap.200731301
Document Type Article
Language English
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